Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon1 Scope This International Standard specifies a secondary ion mass spectrometric method using magnetic sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single crystal, poly crystal, or amorphous silicon specimens with boron atomic concentrations between 1 1016 atoms cm3 and 1 1020 atoms cm3, and to crater

Who is BS EN 60191-6 - Outline drawings for surface mounted semiconductor device packages for

This European Standard specifies requirements and describes test methods for selector valves and their actuators used in CO2 -

4 Means of venting

ISO 787-9 specifies a general method of test for determining the pH value of an aqueous suspension of a sample of pigment or extender

The consistency of the assessment of the impact has been improved and two of the examples have been rewritten

BS EN 3661-006 on single pole circuit breakers bus bar version for aerospace is useful for:

This part of ISO 15548 identifies the functional characteristics of a general-purpose eddy current system and provides methods for their measurement and verification

facility managers and property managers with guidance and recommendations in regard to the management of information and data concerning the facilities they own and/or operate

-        Constructional and experimental sets

This British Standard specifies the requirements for two categories of mineral solvents for use in paints and varnishes

Railway contractors

The requirements of this standard apply to oculars for welding and allied processes but do not apply to equipment for eye and face protection for welding and allied processes